[ { "key": "M24XXICH", "version": 3, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/M24XXICH", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/M24XXICH", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Karow et al.", "parsedDate": "2015-09-01", "numChildren": 0 }, "data": { "key": "M24XXICH", "version": 3, "itemType": "journalArticle", "title": "Defect Creation in InGaAs/GaAs Multiple Quantum Wells – II. Optical Properties", "creators": [ { "creatorType": "author", "firstName": "Matthias M.", "lastName": "Karow" }, { "creatorType": "author", "firstName": "Nikolai N.", "lastName": "Faleev" }, { "creatorType": "author", "firstName": "Aymeric", "lastName": "Maros" }, { "creatorType": "author", "firstName": "Christiana B.", "lastName": "Honsberg" } ], "abstractNote": "The optical properties of three sets of InGaAs/GaAs multiple quantum well (MQW) structures grown by molecular beam epitaxy and previously characterized by x-ray diffraction for crystal perfection were investigated. The correlations between growth conditions, crystal defects, and optical properties are discussed. Evaluation of the relative importance of non-radiative Shockley-Read-Hall (SRH) recombination was carried out according to a method presented herein. The optimal deposition temperature was determined based on both proper carrier confinement in the nanostructures and the least non-radiative recombination. Growing below this temperature increased SRH-recombination whereas higher growth temperatures led to carrier localization in local band edge minima. Varying the MQW periodicity and MQW period allowed the study of their effects on the strength of SRH-recombination. MQW periodicity results are explained in the frame of a cumulative deterioration effect with continued epitaxial growth, while MQW period data shows correlations between relaxation of the initial elastic stress and SRH-strength. Limitations of the underlying model for SRH-analysis are pointed out.", "publicationTitle": "Journal of Crystal Growth", "publisher": "", "place": "", "date": "September 1, 2015", "volume": "425", "issue": "", "section": "", "partNumber": "", "partTitle": "", "pages": "49-53", "series": "The 18th International Conference on Molecular Beam Epitaxy (MBE 2014)", "seriesTitle": "", "seriesText": "", "journalAbbreviation": "Journal of Crystal Growth", "DOI": "10.1016/j.jcrysgro.2015.03.048", "citationKey": "", "url": "http://www.sciencedirect.com/science/article/pii/S0022024815002729", "accessDate": "2015-08-04T13:35:37Z", "PMID": "", "PMCID": "", "ISSN": "0022-0248", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "", "libraryCatalog": "ScienceDirect", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-08-04T13:35:37Z", "dateModified": "2015-08-04T13:35:37Z" } }, { "key": "UBF54JDX", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/UBF54JDX", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/UBF54JDX", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Schultz", "parsedDate": "2015-02-25", "numChildren": 0 }, "data": { "key": "UBF54JDX", "version": 4, "itemType": "journalArticle", "title": "The E1–E 2 center in gallium arsenide is the divacancy", "creators": [ { "creatorType": "author", "firstName": "Peter A", "lastName": "Schultz" } ], "abstractNote": "", "publicationTitle": "Journal of Physics: Condensed Matter", "publisher": "", "place": "", "date": "2015-02-25", "volume": "27", "issue": "7", "section": "", "partNumber": "", "partTitle": "", "pages": "075801", "series": "", "seriesTitle": "", "seriesText": "", "journalAbbreviation": "", "DOI": "10.1088/0953-8984/27/7/075801", "citationKey": "", "url": "http://stacks.iop.org/0953-8984/27/i=7/a=075801?key=crossref.ed87cbaff89fd7bf10a31ca0aaf85e9e", "accessDate": "2015-07-29T20:15:38Z", "PMID": "", "PMCID": "", "ISSN": "0953-8984, 1361-648X", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "", "libraryCatalog": "CrossRef", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:15:38Z", "dateModified": "2015-07-29T22:09:40Z" } }, { "key": "ZK8ZEGVS", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/ZK8ZEGVS", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/ZK8ZEGVS", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Kozlowski et al.", "parsedDate": "2001-04-17", "numChildren": 0 }, "data": { "key": "ZK8ZEGVS", "version": 4, "itemType": "conferencePaper", "title": "Deep-level defects in semi-insulating LT MBE GaAs", "creators": [ { "creatorType": "author", "firstName": "Roman", "lastName": "Kozlowski" }, { "creatorType": "author", "firstName": "Pawel", "lastName": "Kaminski" }, { "creatorType": "author", "firstName": "Peter", "lastName": "Kordos" }, { "creatorType": "author", "firstName": "Michal", "lastName": "Pawlowski" }, { "creatorType": "author", "firstName": "Robert", "lastName": "Cwirko" }, { "creatorType": "editor", "firstName": "Jaroslaw", "lastName": "Rutkowski" }, { "creatorType": "editor", "firstName": "Jakub", "lastName": "Wenus" }, { "creatorType": "editor", "firstName": "Leszek", "lastName": "Kubiak" } ], "abstractNote": "", "proceedingsTitle": "", "conferenceName": "", "publisher": "", "place": "", "date": "2001-4-17", "eventPlace": "", "volume": "", "issue": "", "numberOfVolumes": "", "pages": "203-207", "series": "", "seriesNumber": "", "DOI": "10.1117/12.425430", "ISBN": "", "citationKey": "", "url": "http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=884536", "accessDate": "2015-07-29T20:20:36Z", "ISSN": "", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "", "libraryCatalog": "CrossRef", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:20:36Z", "dateModified": "2015-07-29T22:08:45Z" } }, { "key": "N6R9RPIP", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/N6R9RPIP", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/N6R9RPIP", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Romano et al.", "parsedDate": "2015", "numChildren": 1 }, "data": { "key": "N6R9RPIP", "version": 4, "itemType": "book", "title": "Defects in semiconductors", "creators": [ { "creatorType": "editor", "firstName": "Lucia", "lastName": "Romano" }, { "creatorType": "editor", "firstName": "Vittorio", "lastName": "Privitera" }, { "creatorType": "editor", "firstName": "Chennupati", "lastName": "Jagadish" } ], "abstractNote": "", "series": "Semiconductors and semimetals", "seriesNumber": "91", "volume": "", "numberOfVolumes": "", "edition": "1. ed", "date": "2015", "publisher": "Elsevier/Acad. Press", "place": "Amsterdam", "originalDate": "", "originalPublisher": "", "originalPlace": "", "format": "", "numPages": "445", "ISBN": "978-0-12-801935-1 978-0-12-801935-1", "DOI": "", "citationKey": "", "url": "http://www.sciencedirect.com/science/bookseries/00808784/91", "accessDate": "", "ISSN": "", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "eng", "libraryCatalog": "Gemeinsamer Bibliotheksverbund ISBN", "callNumber": "", "rights": "", "extra": "", "tags": [ { "tag": "Semiconductors Defects", "type": 1 } ], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:40:51Z", "dateModified": "2015-07-29T20:41:08Z" } }, { "key": "NDXQP2UU", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/NDXQP2UU", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/NDXQP2UU", "type": "text/html" }, "up": { "href": "https://api.zotero.org/groups/378185/items/N6R9RPIP", "type": "application/json" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "numChildren": 0 }, "data": { "key": "NDXQP2UU", "version": 4, "parentItem": "N6R9RPIP", "itemType": "note", "note": "Literaturangaben", "tags": [], "relations": {}, "dateAdded": "2015-07-29T20:40:51Z", "dateModified": "2015-07-29T20:40:51Z" } }, { "key": "MQFRRK6X", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/MQFRRK6X", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/MQFRRK6X", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Geng", "parsedDate": "2005", "numChildren": 0 }, "data": { "key": "MQFRRK6X", "version": 4, "itemType": "book", "title": "Semiconductor manufacturing handbook: [wafer processing technologies ; nanotechnology and MEMs ; fab yield, operations, and facilities]", "creators": [ { "creatorType": "editor", "firstName": "Hwaiyu", "lastName": "Geng" } ], "abstractNote": "", "series": "McGraw-Hill handbooks", "seriesNumber": "", "volume": "", "numberOfVolumes": "", "edition": "", "date": "2005", "publisher": "McGraw-Hill", "place": "New York, NY", "originalDate": "", "originalPublisher": "", "originalPlace": "", "format": "", "numPages": "", "ISBN": "978-0-07-144559-7 0-07-144559-5", "DOI": "", "citationKey": "", "url": "http://accessengineeringlibrary.com/browse/semiconductor-manufacturing-handbook", "accessDate": "", "ISSN": "", "archive": "", "archiveLocation": "", "shortTitle": "Semiconductor manufacturing handbook", "language": "eng", "libraryCatalog": "Gemeinsamer Bibliotheksverbund ISBN", "callNumber": "", "rights": "", "extra": "", "tags": [ { "tag": "Halbleitertechnologie", "type": 1 }, { "tag": "Integrated circuits Design and construction Handbooks, manuals, etc", "type": 1 }, { "tag": "Integrated circuits Handbooks, manuals, etc Design and construction", "type": 1 }, { "tag": "Semiconductors Design and construction Handbooks, manuals, etc", "type": 1 }, { "tag": "Semiconductors Handbooks, manuals, etc Design and construction", "type": 1 } ], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:39:19Z", "dateModified": "2015-07-29T20:39:28Z" } }, { "key": "C9PK7MU4", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/C9PK7MU4", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/C9PK7MU4", "type": "text/html" }, "up": { "href": "https://api.zotero.org/groups/378185/items/QQWQ6UC4", "type": "application/json" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } } }, "data": { "key": "C9PK7MU4", "version": 4, "parentItem": "QQWQ6UC4", "itemType": "attachment", "linkMode": "imported_url", "title": "Snapshot", "accessDate": "2015-07-29T20:37:19Z", "url": "http://iopscience.iop.org/0953-8984/27/13/133202/article?fromSearchPage=true", "note": "", "contentType": "text/html", "charset": "utf-8", "filename": "article.html", "md5": null, "mtime": null, "tags": [], "relations": {}, "dateAdded": "2015-07-29T20:37:19Z", "dateModified": "2015-07-29T20:37:19Z" } }, { "key": "QQWQ6UC4", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/QQWQ6UC4", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/QQWQ6UC4", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Chen and Pasquarello", "parsedDate": "2015-04-10", "numChildren": 1 }, "data": { "key": "QQWQ6UC4", "version": 4, "itemType": "journalArticle", "title": "First-principles determination of defect energy levels through hybrid density functionals and GW", "creators": [ { "creatorType": "author", "firstName": "Wei", "lastName": "Chen" }, { "creatorType": "author", "firstName": "Alfredo", "lastName": "Pasquarello" } ], "abstractNote": "In this topical review, we discuss recent progress in electronic-structure methods for calculating defect energy levels in semiconductors and insulators. We concentrate mainly on two advanced electronic-structure schemes, namely hybrid density functional theory and many-body perturbation theory in the GW approximation. These two schemes go beyond standard density functional theory in the semilocal approximation providing a more realistic description of band gaps. In particular, we address important aspects underlying the GW scheme and highlight the correspondence between the defect levels as obtained in the various schemes. We further assess the quality of the band-edge positions determined with hybrid functionals and GW through the calculation of band-offsets at semiconductor heterojunctions and of ionization potentials at semiconductor surfaces.", "publicationTitle": "Journal of Physics: Condensed Matter", "publisher": "", "place": "", "date": "2015-04-10", "volume": "27", "issue": "13", "section": "", "partNumber": "", "partTitle": "", "pages": "133202", "series": "", "seriesTitle": "", "seriesText": "", "journalAbbreviation": "J. Phys.: Condens. Matter", "DOI": "10.1088/0953-8984/27/13/133202", "citationKey": "", "url": "http://iopscience.iop.org/0953-8984/27/13/133202", "accessDate": "2015-07-29T20:37:19Z", "PMID": "", "PMCID": "", "ISSN": "0953-8984", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "en", "libraryCatalog": "Institute of Physics", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:37:19Z", "dateModified": "2015-07-29T20:37:19Z" } }, { "key": "76P78FKV", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/76P78FKV", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/76P78FKV", "type": "text/html" }, "up": { "href": "https://api.zotero.org/groups/378185/items/QAUQVBAQ", "type": "application/json" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } } }, "data": { "key": "76P78FKV", "version": 4, "parentItem": "QAUQVBAQ", "itemType": "attachment", "linkMode": "imported_url", "title": "Snapshot", "accessDate": "2015-07-29T20:36:54Z", "url": "http://iopscience.iop.org/0953-8984/25/41/415801/article?fromSearchPage=true", "note": "", "contentType": "text/html", "charset": "utf-8", "filename": "article.html", "md5": null, "mtime": null, "tags": [], "relations": {}, "dateAdded": "2015-07-29T20:36:54Z", "dateModified": "2015-07-29T20:36:54Z" } }, { "key": "QAUQVBAQ", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/QAUQVBAQ", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/QAUQVBAQ", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Shepidchenko et al.", "parsedDate": "2013-10-16", "numChildren": 1 }, "data": { "key": "QAUQVBAQ", "version": 4, "itemType": "journalArticle", "title": "Tailoring of defect levels by deformations: Te-antisite in CdTe", "creators": [ { "creatorType": "author", "firstName": "A.", "lastName": "Shepidchenko" }, { "creatorType": "author", "firstName": "S.", "lastName": "Mirbt" }, { "creatorType": "author", "firstName": "B.", "lastName": "Sanyal" }, { "creatorType": "author", "firstName": "A.", "lastName": "Håkansson" }, { "creatorType": "author", "firstName": "M.", "lastName": "Klintenberg" } ], "abstractNote": "The properties of the Te-antisite defect in the neutral state in CdTe were examined using ab initio calculations. The influence of three types of deformations (1D, 2D and 3D) on the defect energy levels and formation energies was investigated. It was found that the 2D deformation is the most effective for pushing the defect levels towards the band edges and opening up the bandgap of the semiconductor, and hence may improve the performance of CdTe as a detector material. We studied the defect levels and their occupancies including Jahn–Teller distortions. The Jahn–Teller distorted configuration places the defect level closer to the valence band and this defect level position coincides with the ‘unknown deep donor’ measured in some experiments. Partial densities of states and band structures have been analysed to understand the arrangement of the defect bonds.", "publicationTitle": "Journal of Physics: Condensed Matter", "publisher": "", "place": "", "date": "2013-10-16", "volume": "25", "issue": "41", "section": "", "partNumber": "", "partTitle": "", "pages": "415801", "series": "", "seriesTitle": "", "seriesText": "", "journalAbbreviation": "J. Phys.: Condens. Matter", "DOI": "10.1088/0953-8984/25/41/415801", "citationKey": "", "url": "http://iopscience.iop.org/0953-8984/25/41/415801", "accessDate": "2015-07-29T20:36:54Z", "PMID": "", "PMCID": "", "ISSN": "0953-8984", "archive": "", "archiveLocation": "", "shortTitle": "Tailoring of defect levels by deformations", "language": "en", "libraryCatalog": "Institute of Physics", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:36:54Z", "dateModified": "2015-07-29T20:36:54Z" } }, { "key": "B5EFR63B", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/B5EFR63B", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/B5EFR63B", "type": "text/html" }, "up": { "href": "https://api.zotero.org/groups/378185/items/QPTH57WZ", "type": "application/json" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } } }, "data": { "key": "B5EFR63B", "version": 4, "parentItem": "QPTH57WZ", "itemType": "attachment", "linkMode": "imported_url", "title": "Snapshot", "accessDate": "2015-07-29T20:36:13Z", "url": "http://iopscience.iop.org/0022-3727/48/7/075303/article?fromSearchPage=true", "note": "", "contentType": "text/html", "charset": "utf-8", "filename": "article.html", "md5": null, "mtime": null, "tags": [], "relations": {}, "dateAdded": "2015-07-29T20:36:13Z", "dateModified": "2015-07-29T20:36:13Z" } }, { "key": "QPTH57WZ", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/QPTH57WZ", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/QPTH57WZ", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Peters et al.", "parsedDate": "2015-02-25", "numChildren": 1 }, "data": { "key": "QPTH57WZ", "version": 4, "itemType": "journalArticle", "title": "Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy", "creators": [ { "creatorType": "author", "firstName": "J. A.", "lastName": "Peters" }, { "creatorType": "author", "firstName": "Z.", "lastName": "Liu" }, { "creatorType": "author", "firstName": "J.", "lastName": "Im" }, { "creatorType": "author", "firstName": "S.", "lastName": "Nguyen" }, { "creatorType": "author", "firstName": "M.", "lastName": "Sebastian" }, { "creatorType": "author", "firstName": "A. J.", "lastName": "Freeman" }, { "creatorType": "author", "firstName": "M. G.", "lastName": "Kanatzidis" }, { "creatorType": "author", "firstName": "B. W.", "lastName": "Wessels" } ], "abstractNote": "Defect levels in semi-insulating Tl6I4S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059  ±  0.007), (0.13  ±  0.012), (0.31  ±  0.074), (0.39  ±  0.019), (0.62  ±  0.110), and (0.597  ±  0.105). These defect levels are attributed to vacancies (VI, VS) and antisite defects (IS, TlS, TlI) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements.", "publicationTitle": "Journal of Physics D: Applied Physics", "publisher": "", "place": "", "date": "2015-02-25", "volume": "48", "issue": "7", "section": "", "partNumber": "", "partTitle": "", "pages": "075303", "series": "", "seriesTitle": "", "seriesText": "", "journalAbbreviation": "J. Phys. D: Appl. Phys.", "DOI": "10.1088/0022-3727/48/7/075303", "citationKey": "", "url": "http://iopscience.iop.org/0022-3727/48/7/075303", "accessDate": "2015-07-29T20:36:13Z", "PMID": "", "PMCID": "", "ISSN": "0022-3727", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "en", "libraryCatalog": "Institute of Physics", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:36:13Z", "dateModified": "2015-07-29T20:36:13Z" } }, { "key": "UP3XPXM4", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/UP3XPXM4", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/UP3XPXM4", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Jiang et al.", "parsedDate": "2011-05-11", "numChildren": 1 }, "data": { "key": "UP3XPXM4", "version": 4, "itemType": "journalArticle", "title": "Deep level defects in GaAs1−xBix/GaAs heterostructures", "creators": [ { "creatorType": "author", "firstName": "Zenan", "lastName": "Jiang" }, { "creatorType": "author", "firstName": "D. A.", "lastName": "Beaton" }, { "creatorType": "author", "firstName": "R. B.", "lastName": "Lewis" }, { "creatorType": "author", "firstName": "A. F.", "lastName": "Basile" }, { "creatorType": "author", "firstName": "T.", "lastName": "Tiedje" }, { "creatorType": "author", "firstName": "P. M.", "lastName": "Mooney" } ], "abstractNote": "Deep level transient spectroscopy (DLTS) measurements were performed on p–i–n diodes having i-regions that include a GaAs1−xBix layer sandwiched between two GaAs layers, all grown at T < 400 °C. A GaAs1−xBix/GaAs heterostructure with Bi fraction x = 4.7% grown at 285 °C was found to have several traps in concentrations of ~5 × 1015 cm−3. The location of the observed traps in the i-region is determined from simulations of the band diagrams of these devices at the bias conditions used for the DLTS measurements and confirmed by DLTS spectra taken at various filling voltages.", "publicationTitle": "Semiconductor Science and Technology", "publisher": "", "place": "", "date": "2011-05-11", "volume": "26", "issue": "5", "section": "", "partNumber": "", "partTitle": "", "pages": "055020", "series": "", "seriesTitle": "", "seriesText": "", "journalAbbreviation": "Semicond. Sci. Technol.", "DOI": "10.1088/0268-1242/26/5/055020", "citationKey": "", "url": "http://iopscience.iop.org/0268-1242/26/5/055020", "accessDate": "2015-07-29T20:35:29Z", "PMID": "", "PMCID": "", "ISSN": "0268-1242", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "en", "libraryCatalog": "Institute of Physics", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:35:29Z", "dateModified": "2015-07-29T20:35:29Z" } }, { "key": "KINQDXRF", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/KINQDXRF", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/KINQDXRF", "type": "text/html" }, "up": { "href": "https://api.zotero.org/groups/378185/items/UP3XPXM4", "type": "application/json" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } } }, "data": { "key": "KINQDXRF", "version": 4, "parentItem": "UP3XPXM4", "itemType": "attachment", "linkMode": "imported_url", "title": "Snapshot", "accessDate": "2015-07-29T20:35:29Z", "url": "http://iopscience.iop.org/0268-1242/26/5/055020/article?fromSearchPage=true", "note": "", "contentType": "text/html", "charset": "utf-8", "filename": "article.html", "md5": null, "mtime": null, "tags": [], "relations": {}, "dateAdded": "2015-07-29T20:35:29Z", "dateModified": "2015-07-29T20:35:29Z" } }, { "key": "ASIV3ZTD", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/ASIV3ZTD", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/ASIV3ZTD", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Bourgoin et al.", "parsedDate": "1988", "numChildren": 0 }, "data": { "key": "ASIV3ZTD", "version": 4, "itemType": "journalArticle", "title": "Native defects in gallium arsenide", "creators": [ { "creatorType": "author", "firstName": "J. C.", "lastName": "Bourgoin" }, { "creatorType": "author", "firstName": "H. J.", "lastName": "von Bardeleben" }, { "creatorType": "author", "firstName": "D.", "lastName": "Stiévenard" } ], "abstractNote": "", "publicationTitle": "Journal of Applied Physics", "publisher": "", "place": "", "date": "1988", "volume": "64", "issue": "9", "section": "", "partNumber": "", "partTitle": "", "pages": "R65", "series": "", "seriesTitle": "", "seriesText": "", "journalAbbreviation": "", "DOI": "10.1063/1.341206", "citationKey": "", "url": "http://scitation.aip.org/content/aip/journal/jap/64/9/10.1063/1.341206", "accessDate": "2015-07-29T20:27:11Z", "PMID": "", "PMCID": "", "ISSN": "00218979", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "en", "libraryCatalog": "CrossRef", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:27:11Z", "dateModified": "2015-07-29T20:27:11Z" } }, { "key": "PTU2UECP", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/PTU2UECP", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/PTU2UECP", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "parsedDate": "1983-11-01", "numChildren": 1 }, "data": { "key": "PTU2UECP", "version": 4, "itemType": "book", "title": "ADV ELECTRONICS ELECTRON PHYSICS", "creators": [], "abstractNote": "Includes this chapter: Impurity and Defect Levels in Gallium Arsenide. We have a paper copy in the library and I can scan a copy of the chapter for you.", "series": "", "seriesNumber": "", "volume": "", "numberOfVolumes": "", "edition": "", "date": "1983-11-01", "publisher": "Academic Press", "place": "", "originalDate": "", "originalPublisher": "", "originalPlace": "", "format": "", "numPages": "422", "ISBN": "978-0-08-057726-5", "DOI": "", "citationKey": "", "url": "", "accessDate": "", "ISSN": "", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "en", "libraryCatalog": "Google Books", "callNumber": "", "rights": "", "extra": "", "tags": [ { "tag": "Computers / Software Development & Engineering / General", "type": 1 } ], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:25:08Z", "dateModified": "2015-07-29T20:26:03Z" } }, { "key": "S5EFEWPR", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/S5EFEWPR", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/S5EFEWPR", "type": "text/html" }, "up": { "href": "https://api.zotero.org/groups/378185/items/PTU2UECP", "type": "application/json" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } } }, "data": { "key": "S5EFEWPR", "version": 4, "parentItem": "PTU2UECP", "itemType": "attachment", "linkMode": "linked_url", "title": "Google Books Link", "accessDate": "2015-07-29T20:25:08Z", "url": "https://books.google.com/books?id=SbMcW4WzOk4C", "note": "", "contentType": "text/html", "charset": "", "tags": [], "relations": {}, "dateAdded": "2015-07-29T20:25:08Z", "dateModified": "2015-07-29T20:25:08Z" } }, { "key": "XQE3JDEJ", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/XQE3JDEJ", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/XQE3JDEJ", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Yakushev et al.", "parsedDate": "2015", "numChildren": 0 }, "data": { "key": "XQE3JDEJ", "version": 4, "itemType": "journalArticle", "title": "Optical spectroscopy studies of Cu2ZnSnSe4 thin films", "creators": [ { "creatorType": "author", "firstName": "M.V.", "lastName": "Yakushev" }, { "creatorType": "author", "firstName": "I.", "lastName": "Forbes" }, { "creatorType": "author", "firstName": "A.V.", "lastName": "Mudryi" }, { "creatorType": "author", "firstName": "M.", "lastName": "Grossberg" }, { "creatorType": "author", "firstName": "J.", "lastName": "Krustok" }, { "creatorType": "author", "firstName": "N.S.", "lastName": "Beattie" }, { "creatorType": "author", "firstName": "M.", "lastName": "Moynihan" }, { "creatorType": "author", "firstName": "A.", "lastName": "Rockett" }, { "creatorType": "author", "firstName": "R.W.", "lastName": "Martin" } ], "abstractNote": "", "publicationTitle": "Thin Solid Films", "publisher": "", "place": "", "date": "05/2015", "volume": "582", "issue": "", "section": "", "partNumber": "", "partTitle": "", "pages": "154-157", "series": "", "seriesTitle": "", "seriesText": "", "journalAbbreviation": "", "DOI": "10.1016/j.tsf.2014.09.010", "citationKey": "", "url": "http://linkinghub.elsevier.com/retrieve/pii/S0040609014008888", "accessDate": "2015-07-29T20:22:04Z", "PMID": "", "PMCID": "", "ISSN": "00406090", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "en", "libraryCatalog": "CrossRef", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T20:22:04Z", "dateModified": "2015-07-29T20:22:04Z" } }, { "key": "W8W78DNR", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/W8W78DNR", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/W8W78DNR", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Schroder", "parsedDate": "2005", "numChildren": 1 }, "data": { "key": "W8W78DNR", "version": 4, "itemType": "bookSection", "title": "Defects", "creators": [ { "creatorType": "author", "firstName": "Dieter K.", "lastName": "Schroder" } ], "abstractNote": "We have a paper copy of this book that is currently checked out. Let me know if this chapter looks interesting and I will recall it for you.", "bookTitle": "Semiconductor Material and Device Characterization", "series": "", "seriesNumber": "", "volume": "", "numberOfVolumes": "", "edition": "", "date": "2005", "publisher": "John Wiley & Sons, Inc.", "place": "", "originalDate": "", "originalPublisher": "", "originalPlace": "", "format": "", "pages": "251-317", "ISBN": "978-0-471-74909-7", "DOI": "", "citationKey": "", "url": "http://onlinelibrary.wiley.com/doi/10.1002/0471749095.ch5/summary", "accessDate": "2015-07-29T19:58:43Z", "ISSN": "", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "en", "libraryCatalog": "Wiley Online Library", "callNumber": "", "rights": "Copyright © 2006 John Wiley & Sons, Inc.", "extra": "", "tags": [ { "tag": "Thermally stimulated capacitance (TSCAP)", "type": 1 }, { "tag": "deep-level transient spectroscopy (DLTS)", "type": 1 }, { "tag": "semiconductor defects", "type": 1 } ], "collections": [], "relations": {}, "dateAdded": "2015-07-29T19:58:43Z", "dateModified": "2015-07-29T20:15:35Z" } }, { "key": "7VVPPUU3", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/7VVPPUU3", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/7VVPPUU3", "type": "text/html" }, "up": { "href": "https://api.zotero.org/groups/378185/items/W8W78DNR", "type": "application/json" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } } }, "data": { "key": "7VVPPUU3", "version": 4, "parentItem": "W8W78DNR", "itemType": "attachment", "linkMode": "imported_url", "title": "Snapshot", "accessDate": "2015-07-29T19:58:43Z", "url": "http://onlinelibrary.wiley.com/doi/10.1002/0471749095.ch5/summary", "note": "", "contentType": "text/html", "charset": "utf-8", "filename": "summary.html", "md5": null, "mtime": null, "tags": [], "relations": {}, "dateAdded": "2015-07-29T19:58:43Z", "dateModified": "2015-07-29T19:58:43Z" } }, { "key": "3NVFBWZ5", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/3NVFBWZ5", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/3NVFBWZ5", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Yu and Cardona", "parsedDate": "2005", "numChildren": 1 }, "data": { "key": "3NVFBWZ5", "version": 4, "itemType": "book", "title": "Fundamentals of semiconductors: physics and materials properties ; with 52 tables and 116 problems. We don't have a copy of this book but can either borrow a copy or purchase one if you think it will be useful.", "creators": [ { "creatorType": "author", "firstName": "Peter Y.", "lastName": "Yu" }, { "creatorType": "author", "firstName": "Manuel", "lastName": "Cardona" } ], "abstractNote": "", "series": "", "seriesNumber": "", "volume": "", "numberOfVolumes": "", "edition": "3., rev. and enl. ed., 3., corr. print", "date": "2005", "publisher": "Springer", "place": "Berlin", "originalDate": "", "originalPublisher": "", "originalPlace": "", "format": "", "numPages": "639", "ISBN": "978-3-540-25470-6 3-540-25470-6 978-3-540-25470-6", "DOI": "", "citationKey": "", "url": "http://link.springer.com/book/10.1007/b137661", "accessDate": "", "ISSN": "", "archive": "", "archiveLocation": "", "shortTitle": "Fundamentals of semiconductors", "language": "eng", "libraryCatalog": "Gemeinsamer Bibliotheksverbund ISBN", "callNumber": "", "rights": "", "extra": "", "tags": [ { "tag": "Halbleiter", "type": 1 }, { "tag": "Halbleiterphysik", "type": 1 }, { "tag": "Lehrbuch", "type": 1 }, { "tag": "Semiconductors", "type": 1 }, { "tag": "Semiconductors Materials", "type": 1 } ], "collections": [], "relations": {}, "dateAdded": "2015-07-29T19:53:18Z", "dateModified": "2015-07-29T19:54:21Z" } }, { "key": "2E42UUSU", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/2E42UUSU", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/2E42UUSU", "type": "text/html" }, "up": { "href": "https://api.zotero.org/groups/378185/items/3NVFBWZ5", "type": "application/json" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "numChildren": 0 }, "data": { "key": "2E42UUSU", "version": 4, "parentItem": "3NVFBWZ5", "itemType": "note", "note": "Literaturverz. S. [583] - 617", "tags": [], "relations": {}, "dateAdded": "2015-07-29T19:53:18Z", "dateModified": "2015-07-29T19:53:18Z" } }, { "key": "C94NCDDA", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/C94NCDDA", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/C94NCDDA", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Qi", "parsedDate": "1995", "numChildren": 0 }, "data": { "key": "C94NCDDA", "version": 4, "itemType": "thesis", "title": "Nonlinear optical spectroscopy of gallium arsenide interfaces", "creators": [ { "creatorType": "author", "firstName": "Jining", "lastName": "Qi" } ], "abstractNote": "", "thesisType": "", "university": "University of Pennsylvania", "place": "", "date": "1995", "series": "", "seriesNumber": "", "numPages": "", "DOI": "", "ISBN": "", "citationKey": "", "url": "http://www.physics.upenn.edu/yodhlab/theses/jining_qi.pdf", "accessDate": "", "ISSN": "", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "", "libraryCatalog": "", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T19:48:44Z", "dateModified": "2015-07-29T19:49:38Z" } }, { "key": "SREPB3NZ", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/SREPB3NZ", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/SREPB3NZ", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Schultz and von Lilienfeld", "parsedDate": "2009-12-01", "numChildren": 0 }, "data": { "key": "SREPB3NZ", "version": 4, "itemType": "journalArticle", "title": "Simple intrinsic defects in gallium arsenide", "creators": [ { "creatorType": "author", "firstName": "Peter A", "lastName": "Schultz" }, { "creatorType": "author", "firstName": "O Anatole", "lastName": "von Lilienfeld" } ], "abstractNote": "", "publicationTitle": "Modelling and Simulation in Materials Science and Engineering", "publisher": "", "place": "", "date": "2009-12-01", "volume": "17", "issue": "8", "section": "", "partNumber": "", "partTitle": "", "pages": "084007", "series": "", "seriesTitle": "", "seriesText": "", "journalAbbreviation": "", "DOI": "10.1088/0965-0393/17/8/084007", "citationKey": "", "url": "http://stacks.iop.org/0965-0393/17/i=8/a=084007?key=crossref.d241dcaaeff87e5f653b453985afa3a6", "accessDate": "2015-07-29T19:47:22Z", "PMID": "", "PMCID": "", "ISSN": "0965-0393, 1361-651X", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "", "libraryCatalog": "CrossRef", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T19:47:22Z", "dateModified": "2015-07-29T19:47:22Z" } }, { "key": "FX9JHXKP", "version": 4, "library": { "type": "group", "id": 378185, "name": "semiconductor defects", "links": { "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/378185/items/FX9JHXKP", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/semiconductor_defects/items/FX9JHXKP", "type": "text/html" } }, "meta": { "createdByUser": { "id": 250494, "username": "tsandberg", "name": "Tami Sandberg", "links": { "alternate": { "href": "https://www.zotero.org/tsandberg", "type": "text/html" } } }, "creatorSummary": "Chantre et al.", "parsedDate": "1981-05-15", "numChildren": 0 }, "data": { "key": "FX9JHXKP", "version": 4, "itemType": "journalArticle", "title": "Deep-level optical spectroscopy in GaAs", "creators": [ { "creatorType": "author", "firstName": "A.", "lastName": "Chantre" }, { "creatorType": "author", "firstName": "G.", "lastName": "Vincent" }, { "creatorType": "author", "firstName": "D.", "lastName": "Bois" } ], "abstractNote": "", "publicationTitle": "Physical Review B", "publisher": "", "place": "", "date": "1981-5-15", "volume": "23", "issue": "10", "section": "", "partNumber": "", "partTitle": "", "pages": "5335-5359", "series": "", "seriesTitle": "", "seriesText": "", "journalAbbreviation": "", "DOI": "10.1103/PhysRevB.23.5335", "citationKey": "", "url": "http://link.aps.org/doi/10.1103/PhysRevB.23.5335", "accessDate": "2015-07-29T19:45:53Z", "PMID": "", "PMCID": "", "ISSN": "0163-1829", "archive": "", "archiveLocation": "", "shortTitle": "", "language": "en", "libraryCatalog": "CrossRef", "callNumber": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2015-07-29T19:45:53Z", "dateModified": "2015-07-29T19:45:53Z" } } ]