[ { "key": "TN2PRWTG", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/TN2PRWTG", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/TN2PRWTG", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Schmid et al.", "parsedDate": "2008-03-18", "numChildren": 0 }, "data": { "key": "TN2PRWTG", "version": 1, "itemType": "patent", "title": "System and method for crystal growing", "creators": [ { "creatorType": "inventor", "firstName": "Frederick", "lastName": "Schmid" }, { "creatorType": "inventor", "firstName": "Chandra P.", "lastName": "Khattak" }, { "creatorType": "inventor", "firstName": "David B.", "lastName": "Joyce" } ], "abstractNote": "To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.", "place": "", "country": "", "assignee": "Crystal Systems, Inc.", "issuingAuthority": "", "patentNumber": "7344596", "filingDate": "", "pages": "", "applicationNumber": ": 11/212,027", "priorityNumbers": "", "issueDate": "Mar 18, 2008", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=SN2oAAAAEBAJ", "accessDate": "2009-02-07T10:58:58Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 117/206; 117/201; 117/202; 117/204; 117/207; 117/223; 117/900; 117/932; 117/936", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "FWCAKEK2", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/FWCAKEK2", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/FWCAKEK2", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Goins et al.", "parsedDate": "1989-09-12", "numChildren": 0 }, "data": { "key": "FWCAKEK2", "version": 1, "itemType": "patent", "title": "Smelting process for making elemental silicon and alloys thereof, and ...", "creators": [ { "creatorType": "inventor", "firstName": "Curtis W.", "lastName": "Goins" }, { "creatorType": "inventor", "firstName": "", "lastName": "Jr" }, { "creatorType": "inventor", "firstName": "Earl K.", "lastName": "Stanley" } ], "abstractNote": "A smelting process for making elemental silicon and alloys thereof is disclosed. The smelting process is of the electrometallurgical type for producing elemental silicon from silicon dioxide including silicon alloyed and silicon in a substantially pure form. The process includes establishing and maintaining countercurrent contact between collected oxide and a bed of carbonaceous reductant for reducing at least part of the collected oxide to additional elemental silicon.", "place": "", "country": "", "assignee": "Globe Metallurgical, Inc.", "issuingAuthority": "", "patentNumber": "4865643", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Sep 12, 1989", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=3sQvAAAAEBAJ&dq=%22Smelting+process+for+making+elemental+silicon+and+alloys+thereof,+and+apparatus+therefor%22", "accessDate": "2009-01-13T08:52:52Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 75/106.3; 75/105.0; 75/105.3; 423/348; 423/349; 423/350; 373/9 ; International Classification: C21C 552; C22B 400", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "6Q3JVNDX", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/6Q3JVNDX", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/6Q3JVNDX", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Zumbrunnen", "parsedDate": "1980-12-30", "numChildren": 0 }, "data": { "key": "6Q3JVNDX", "version": 1, "itemType": "patent", "title": "Silicon refining process", "creators": [ { "creatorType": "inventor", "firstName": "Allen D.", "lastName": "Zumbrunnen" } ], "abstractNote": "Metallurgical grade silicon is melted and the resulting impure molten metal is continuously flowed downwardly as a thin film through an atmosphere of impurity-reactive gas or gases directly into a crucible, wherein it is subjected to directional solidification. The preferred apparatus for carrying out the process comprises a heated reaction chamber fed peripherally from a superimposed melting chamber, the reaction chamber having horizontally rippled interior wall surfaces of a substantially non-reactive material, such as graphite, silicon carbide, or silicon nitride, so the descending film of molten metal will be agitated and spread laterally. Means are provided for introducing the reactive gas or gases near the bottom of the reaction chamber and for exhausting the spent gas at the top. The reaction chamber is superimposed above and in vertically spaced relationship with an electric furnace, which encircles a columnar crucible. The reaction chamber has a bottom discharge orifice...", "place": "", "country": "", "assignee": "", "issuingAuthority": "", "patentNumber": "4242175", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Dec 30, 1980", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=9eQsAAAAEBAJ&dq=4242175+silicon", "accessDate": "2008-12-19T12:56:46Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 156/616R; 156DIG64; 164/55; 164/68; 164/133; 266/217; 422/247 ; International Classification: C30B 1102", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "CCH2NKQW", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/CCH2NKQW", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/CCH2NKQW", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Lynch and Oye", "parsedDate": "2007", "numChildren": 0 }, "data": { "key": "CCH2NKQW", "version": 1, "itemType": "patent", "title": "Silicon refining process", "creators": [ { "creatorType": "inventor", "firstName": "David C.", "lastName": "Lynch" }, { "creatorType": "inventor", "firstName": "Harald A.", "lastName": "Oye" } ], "abstractNote": "Nitrogen and aluminum and fluxing agents (Al2O3, SiO2, CaO and MgO) are added to molten silicon to create an oxy-nitride slag that acts as a sink for dissolved boron and phosphorus. The nitrogen can be added by bubbling nitrogen gas through the molten silicon; the aluminum can be added as aluminum metal or as Al2O3. Normally, the silicon must initially be deoxidized to allow the boron and phosphorus refining reactions to occur. The process may be followed by oxidative refining, SiC settling, the Silgrain process and directional solidification to remove other impurities and produce silicon suitable for use in solar cells. In an alternative version of the process, the molten silicon is passed through a particulate bed formed of a nitrogen-containing compound and an aluminum-containing compound.", "place": "", "country": "", "assignee": "The Arizona Board of Regents on Behalf of the University of Arizona", "issuingAuthority": "", "patentNumber": "", "filingDate": "", "pages": "", "applicationNumber": "11/785,114", "priorityNumbers": "", "issueDate": "2007", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=sCeiAAAAEBAJ", "accessDate": "2009-02-19T14:53:35Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 075406000", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "48XCUIM5", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/48XCUIM5", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/48XCUIM5", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Fujiwara et al.", "parsedDate": "2005-06-30", "numChildren": 0 }, "data": { "key": "48XCUIM5", "version": 1, "itemType": "patent", "title": "Silicon purifying method, slag for purifying silicon and purified silicon", "creators": [ { "creatorType": "inventor", "firstName": "Hiroyasu", "lastName": "Fujiwara" }, { "creatorType": "inventor", "firstName": "Ryotatsu", "lastName": "Otsuka" }, { "creatorType": "inventor", "firstName": "Kenji", "lastName": "Wada" }, { "creatorType": "inventor", "firstName": "Toshiaki", "lastName": "Fukuyama" } ], "abstractNote": "Method capable of preparing silicon having purity of about 6N applied to a solar cell efficiently at a low cost. Raw silicon containing boron and a slag are melted and a shaft is rotated by a rotating/driving mechanism for stirring the molten silicon. The molten slag is dispersed in the molten silicon, thereby accelerating the boron removal reaction. It is further effective to use a slag containing at least 45 percent by mass of silicon oxide or to blow gas mixed with water vapor into the molten silicon for refining reaction.", "place": "", "country": "", "assignee": "", "issuingAuthority": "", "patentNumber": "", "filingDate": "2005-01-30 2005-01-30", "pages": "", "applicationNumber": "10/503,304", "priorityNumbers": "", "issueDate": "30 Jun, 2005", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=zUuSAAAAEBAJ&dq=Medium+purity+metallurgical+silicon+and+method+for+preparing+same", "accessDate": "2009-01-15T08:01:00Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 117013000 ; International Classification: C30B015/00; C30B021/06; C30B027/02; C30B028/10; C30B030/04", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "N767BSFC", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/N767BSFC", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/N767BSFC", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Dawless", "parsedDate": "1981-01-20", "numChildren": 0 }, "data": { "key": "N767BSFC", "version": 1, "itemType": "patent", "title": "Silicon purification process", "creators": [ { "creatorType": "inventor", "firstName": "Robert K.", "lastName": "Dawless" } ], "abstractNote": "A method for purifying silicon comprises the steps of providing a body of molten silicon-rich material and extracting heat therefrom to provide a solid phase containing silicon in crystal form and to concentrate impurities in a molten phase. After a desired amount of heat has been extracted, a substantial part of the molten phase is separated from the solid phase. A fraction or portion of the solid phase is remelted for purposes of removing solvent metal, including impurities, from the crystals, and at least one fraction of the remelted material is separated from the crystals.", "place": "", "country": "", "assignee": "Aluminum Company of America", "issuingAuthority": "", "patentNumber": "4246249", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Jan 20, 1981", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=wT0zAAAAEBAJ&dq=Silicon+purification+process+induction+heating", "accessDate": "2008-12-11T10:00:46Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 423/348; 23295R; 23296; 156DIG64; 219/105.7 ; International Classification: B01D 900; C01B 3302", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "573WIJU2", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/573WIJU2", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/573WIJU2", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Perlman", "parsedDate": "1954-07", "numChildren": 0 }, "data": { "key": "573WIJU2", "version": 1, "itemType": "patent", "title": "PRODUCTION OF GERMANIUM RODS HAV", "creators": [ { "creatorType": "inventor", "firstName": "", "lastName": "Perlman" } ], "abstractNote": "", "place": "", "country": "", "assignee": "", "issuingAuthority": "", "patentNumber": "2683676", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Jul 1954", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=g1dwAAAAEBAJ&dq=Teal+Little+US+patent+2683676+1950", "accessDate": "2009-01-14T14:07:38Z", "shortTitle": "", "language": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "WXCJN3GP", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/WXCJN3GP", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/WXCJN3GP", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Kumar and Prakash", "parsedDate": "1995-07-11", "numChildren": 0 }, "data": { "key": "WXCJN3GP", "version": 1, "itemType": "patent", "title": "Process for the preparation of polycrystalline silicon ingot", "creators": [ { "creatorType": "inventor", "firstName": "Singh P.", "lastName": "Kumar" }, { "creatorType": "inventor", "firstName": "Prem", "lastName": "Prakash" } ], "abstractNote": "This invention relates to a process for the preparation of polycrystalline silicon ingots by providing a first layer of coating on the inside walls of a mold with a slurry of silicon nitride powder in an organic binder dissolved in a solvent; charging the said coated mold with silicon pieces along with calcium chloride or/and calcium fluoride; heating the mold to a temperature in the range of 1420.degree.-1500.degree. C. so as to melt the silicon, by keeping the mold inside the furnace; bringing down the temperature of the mold to a temperature 5.degree.-10.degree. C. above the melting point of silicon; withdrawing the mold containing the melt downwardly and slowly from the hot zone of the furnace so that the solidification of the melt starts from the bottom of the mold and proceeds towards the top as the withdrawal continues till all the melt solidifies; cooling the mold to the room temperature under inert atmosphere and removing the polycrystalline silicon ingot from the mold.", "place": "", "country": "", "assignee": "Council of Scientific & Industrial Research", "issuingAuthority": "", "patentNumber": "5431869", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Jul 11, 1995", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=fskgAAAAEBAJ&dq=Process+for+the+preparation+of+polycrystalline+silicon+ingot", "accessDate": "2009-01-22T08:09:36Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 264/85; 264/25; 264/338 ; International Classification: B29C 3356", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "H8SR7ECZ", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/H8SR7ECZ", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/H8SR7ECZ", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Schwirtlich and Woditsch", "parsedDate": "1991-05-07", "numChildren": 0 }, "data": { "key": "H8SR7ECZ", "version": 1, "itemType": "patent", "title": "Process for the melting and directional solidification of metals", "creators": [ { "creatorType": "inventor", "firstName": "Ingo", "lastName": "Schwirtlich" }, { "creatorType": "inventor", "firstName": "Peter", "lastName": "Woditsch" } ], "abstractNote": "A process for the production of columnlarly solidified metallic bodies by melting metal and then solidifying said metal in a crucible, wherein the dissipation of heat is greater at the upper or lower end of the crucible than at the sides, which comprises supplying heat to the verticals sides through a heating element having a plurality of individually controlled heating sections in such a quantity that a melt of the metal is formed and then establishing directional solidification by establishing a temperature gradient by varying the heat output among the heating sections of the heating element by switching.", "place": "", "country": "", "assignee": "Bayer Aktiengesellschaft", "issuingAuthority": "", "patentNumber": "5013393", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "May 7, 1991", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=3yYhAAAAEBAJ", "accessDate": "2009-03-18T12:38:48Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 156/616.2; 156/616.4 ; International Classification: C30B 1102", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "R9HSCBMS", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/R9HSCBMS", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/R9HSCBMS", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Buehler et al.", "parsedDate": "1956-10", "numChildren": 0 }, "data": { "key": "R9HSCBMS", "version": 1, "itemType": "patent", "title": "PROCESS FOR PRODUCING SEMICONDUCTIVE", "creators": [ { "creatorType": "inventor", "firstName": "Ernest", "lastName": "Buehler" }, { "creatorType": "inventor", "firstName": "Chatham", "lastName": "Township" }, { "creatorType": "inventor", "firstName": "Morris", "lastName": "County" }, { "creatorType": "inventor", "firstName": "Gordon K.", "lastName": "Teal" } ], "abstractNote": "", "place": "", "country": "", "assignee": "", "issuingAuthority": "", "patentNumber": "2768914", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Oct 1956", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=P4dbAAAAEBAJ&dq=Buehler+Teal+US+patent+2768914+1951", "accessDate": "2009-01-14T14:08:26Z", "shortTitle": "", "language": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "3V2ZEBM3", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/3V2ZEBM3", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/3V2ZEBM3", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Yamazaki and Okuno", "parsedDate": "2000-10-24", "numChildren": 0 }, "data": { "key": "3V2ZEBM3", "version": 1, "itemType": "patent", "title": "Process and apparatus for producing polycrystalline semiconductor ingot", "creators": [ { "creatorType": "inventor", "firstName": "Motoharu", "lastName": "Yamazaki" }, { "creatorType": "inventor", "firstName": "Tetsuhiro", "lastName": "Okuno" } ], "abstractNote": "A silicon semiconductor material is charged in a double-structured crucible of an outer crucible and an inner crucible. The crucible is heated from the upper side thereof by the heat radiated from a heating member energized by an induction heating coil, so that the silicon raw semiconductor material is melted. The bottom of the crucible is mounted on a supporting bed cooled by cooling water supplied from a cooling medium tank. The silicon semiconductor material is melted in the inner crucible and starts solidifying from the bottom portion thereof. The silicon semiconductor material expands in volume at the time of solidification. Since a gap is formed between the inner crucible and the outer crucible, however, the outward extension of the inner crucible with the silicon semiconductor material alleviates a strain generated at the time of solidification, thereby producing an excellent polycrystalline semiconductor ingot. As a result, the strain in the polycrystalline semiconductor...", "place": "", "country": "", "assignee": "Sharp Kabushiki Kaisha", "issuingAuthority": "", "patentNumber": "6136091", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "24 Oct 2000", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.it/patents?id=DnoFAAAAEBAJ", "accessDate": "2009-01-22T16:02:43Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 117/81; 117/83 ; International Classification: C30B 1320", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "6FRGJ4SR", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/6FRGJ4SR", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/6FRGJ4SR", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Scaff", "parsedDate": "1946-06", "numChildren": 0 }, "data": { "key": "6FRGJ4SR", "version": 1, "itemType": "patent", "title": "PREPARATION OF SILICON MATERIALS", "creators": [ { "creatorType": "inventor", "firstName": "Jack H.", "lastName": "Scaff" } ], "abstractNote": "", "place": "", "country": "", "assignee": "", "issuingAuthority": "", "patentNumber": "2402582", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Jun 1946", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=b3JtAAAAEBAJ&printsec=abstract&zoom=4&dq=silicon+furnace+solidification+-induction", "accessDate": "2009-01-08T09:07:02Z", "shortTitle": "", "language": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "C67STAXJ", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/C67STAXJ", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/C67STAXJ", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Keyser and Cline", "parsedDate": "1978-06-13", "numChildren": 0 }, "data": { "key": "C67STAXJ", "version": 1, "itemType": "patent", "title": "Method of purifying silicon", "creators": [ { "creatorType": "inventor", "firstName": "Naaman H.", "lastName": "Keyser" }, { "creatorType": "inventor", "firstName": "James C.", "lastName": "Cline" } ], "abstractNote": "A process for producing crystalline silicon having an iron concentration less than about one-twentieth of the iron concentration of the mother liquor. Iron contaminated silicon is introduced into a mold and the mold walls are maintained at a temperature sufficient to cause silicon crystalline growth. The mother liquor is agitated to wash the exposed surfaces of the growing silicon crystals and to prevent the freezing of the top surface of the mother liquor. A hollow crystalline silicon ingot is formed and both the inner zone centrally of the crystalline ingot and the outer zone adjacent to the mold wall are removed leaving an inner zone having an iron concentration less than one-twentieth of the iron concentration of the original mother liquor.", "place": "", "country": "", "assignee": "Interlake, Inc.", "issuingAuthority": "", "patentNumber": "4094731", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Jun 13, 1978", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=IUA0AAAAEBAJ&dq=METHOD+FOR+PURIFYING+SILICON", "accessDate": "2009-01-28T07:41:53Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 156/616R; 156/622; 156/624; 156DIG64; 23295R; 423/348; 295/276; 164/60 ; International Classification: C01b 3302; B01j 1708", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "RFDQTRXZ", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/RFDQTRXZ", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/RFDQTRXZ", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Kaneko and Mizumoto", "parsedDate": "1993-12-07", "numChildren": 0 }, "data": { "key": "RFDQTRXZ", "version": 1, "itemType": "patent", "title": "Method of manufacturing single-crystal silicon", "creators": [ { "creatorType": "inventor", "firstName": "Kyojiro", "lastName": "Kaneko" }, { "creatorType": "inventor", "firstName": "Hideyuki", "lastName": "Mizumoto" } ], "abstractNote": "A single crystal silicon is prepared by constructing a silicon melt reservoir of an induction coil coated on its internal surface with a layer of a high melting point insulating material and placing silicon raw material in the reservoir, heating the silicon raw material by application of an external heating means and by current applied to the induction coil which electromagnetically heats the silicon thereby forming a pool of molten silicon in the reservoir, actively cooling said induction coil, and drawing up a single crystal silicon rod from the molten silicon in the melt reservoir.", "place": "", "country": "", "assignee": "Sumitomo Sitix Co., Ltd.", "issuingAuthority": "", "patentNumber": "5268063", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "7 Dec 1993", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.it/patents?id=bNEjAAAAEBAJ&dq=stirring+solar+silicon+induction", "accessDate": "2009-05-20T11:12:32Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 156/617.1; 156/618.1; 156/620.4; 156DIG83; 156DIG102; 156DIG103 ; International Classification: C30B 2906", "tags": [ { "tag": "CZ" }, { "tag": "induction" } ], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "TIK22UIW", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/TIK22UIW", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/TIK22UIW", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Halvorsen", "parsedDate": "1985-09-03", "numChildren": 0 }, "data": { "key": "TIK22UIW", "version": 1, "itemType": "patent", "title": "Method for production of pure silicon", "creators": [ { "creatorType": "inventor", "firstName": "Gunnar", "lastName": "Halvorsen" } ], "abstractNote": "Pure silicon metal is produced from a silicon metal which contains 1-10% Ca and which is cast into molds with relatively slow rate of cooling. The cast metal is pre-crushed and thereupon subjected to a purification process consisting of two leaching steps where in the first leaching step there is employed an aqueous solution of FeCl.sub.3 or FeCl.sub.3 +HCl which causes a disintegration of the metal. The fines are washed away in place thereof, and the metal is further leached in the second leaching step with an aqueous HF+HNO.sub.3 solution. The necessary amount of calcium is supplied in the smelting furnace in the form of CaO or other suitable Ca compound.", "place": "", "country": "", "assignee": "Elkem a/s", "issuingAuthority": "", "patentNumber": "4539194", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "3 Sep 1985", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.it/patents?id=Dow2AAAAEBAJ&dq=stirring+solar+silicon+induction", "accessDate": "2009-05-20T11:10:48Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 423/348 ; International Classification: C01B 3302", "tags": [ { "tag": "induction" }, { "tag": "stirring" } ], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "FWJVWF8R", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/FWJVWF8R", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/FWJVWF8R", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Dosaj and Hunt", "parsedDate": "1981-01-27", "numChildren": 0 }, "data": { "key": "FWJVWF8R", "version": 1, "itemType": "patent", "title": "Method for producing solar-cell-grade silicon", "creators": [ { "creatorType": "inventor", "firstName": "Vishu D.", "lastName": "Dosaj" }, { "creatorType": "inventor", "firstName": "Lee P.", "lastName": "Hunt" } ], "abstractNote": "Silica is reduced in a direct arc reactor by activated carbon or carbon black having relatively low boron (B) and phosphorus (P) contents to produce silicon having similarly low B and P contents and suitable for use in photovoltaic cells for converting solar energy directly to electrical energy.", "place": "", "country": "", "assignee": "Dow Corning Corporation", "issuingAuthority": "", "patentNumber": "4247528", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Jan 27, 1981", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=YfY0AAAAEBAJ&dq=silicon+furnace+solidification+-induction", "accessDate": "2009-01-08T08:53:52Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 423/350; 156/616R; 23296 ; International Classification: C01B 3302", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "39DWGEWT", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/39DWGEWT", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/39DWGEWT", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Kimura and Yamagishi", "parsedDate": "1996-09-17", "numChildren": 0 }, "data": { "key": "39DWGEWT", "version": 1, "itemType": "patent", "title": "Method for producing a silicon single crystal by a float-zone method", "creators": [ { "creatorType": "inventor", "firstName": "Masanori", "lastName": "Kimura" }, { "creatorType": "inventor", "firstName": "Hirotoshi", "lastName": "Yamagishi" } ], "abstractNote": "A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described.", "place": "", "country": "", "assignee": "Shin-Etsu Handotai Co., Ltd.", "issuingAuthority": "", "patentNumber": "5556461", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Sep 17, 1996", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=W1gdAAAAEBAJ&dq=float+zone+silicon", "accessDate": "2009-01-13T10:05:17Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 117/52; 117/49; 117/50; 117/204 ; International Classification: C30B 1302", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "PKFGBI2J", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/PKFGBI2J", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/PKFGBI2J", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Kim and Allen", "parsedDate": "1998-09-29", "numChildren": 0 }, "data": { "key": "PKFGBI2J", "version": 1, "itemType": "patent", "title": "Method for preparing molten silicon melt from polycrystalline silicon charge", "creators": [ { "creatorType": "inventor", "firstName": "Kyong-Min", "lastName": "Kim" }, { "creatorType": "inventor", "firstName": "Leon A.", "lastName": "Allen" } ], "abstractNote": "A process for preparing a molten silicon melt from polycrystalline silicon for use in producing single crystal silicon by the Czochralski method is disclosed. Granular and chunk polycrystalline silicon are loaded into a Czochralski crucible as a mixed charge. Preferably, the granular polycrystalline silicon is loaded onto the bottom, mounded toward the centerline of the crucible, and not contacting the upper portion of the wall of the crucible. The chunk polycrystalline silicon is loaded onto the granular polycrystalline silicon. The granular polycrystalline silicon and chunk polycrystalline silicon are melted to form a silicon melt, preferably by heating the polycrystalline silicon from the bottom up such that a substantial portion of the granular polycrystalline silicon is melted before a substantial portion of the chunk polycrystalline silicon is melted. As the melting progresses, the chunk polycrystalline silicon exerts a downward...", "place": "", "country": "", "assignee": "MEMC Electronic Materials, Inc.", "issuingAuthority": "", "patentNumber": "5814148", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Sep 29, 1998", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=BKkBAAAAEBAJ&dq=Process+for+the+preparation+of+polycrystalline+silicon+ingot", "accessDate": "2009-01-22T08:12:09Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 117/13; 117/17; 117/35; 117/932 ; International Classification: C30B 1514", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "PMC4QBC7", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/PMC4QBC7", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/PMC4QBC7", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Holder", "parsedDate": "1996-12-31", "numChildren": 0 }, "data": { "key": "PMC4QBC7", "version": 1, "itemType": "patent", "title": "Method for preparing molten silicon melt from polycrystalline silicon charge", "creators": [ { "creatorType": "inventor", "firstName": "John D.", "lastName": "Holder" } ], "abstractNote": "A process for preparing a molten silicon melt from polycrystalline silicon for use in producing single crystal silicon by the Czochralski method is disclosed. Polycrystalline silicon is initially loaded into a Czochralski crucible, and melted to form a partially melted charge which includes both molten silicon and unmelted polycrystalline silicon. The molten silicon has an upper surface above which the unmelted polycrystalline silicon is partially exposed. Granular-polycrystalline silicon is fed onto the exposed unmelted polycrystalline silicon in a manner sufficient to allow the granular-polycrystalline silicon to dehydrogenate while it is resident on the surface of the unmelted polycrystalline silicon and before it becomes immersed in the molten silicon. The granular-polycrystalline silicon and the unmelted polycrystalline silicon are then fully melted to form a molten silicon melt. The method results in improved zero defect yield, throughput and mean hot cycle times during...", "place": "", "country": "", "assignee": "MEMC Electronic Materials, Inc.", "issuingAuthority": "", "patentNumber": "5588993", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Dec 31, 1996", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=QNIlAAAAEBAJ&dq=Process+for+the+preparation+of+polycrystalline+silicon+ingot", "accessDate": "2009-01-22T08:13:38Z", "shortTitle": "", "language": "", "rights": "", "extra": "", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "RU49QMH4", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/RU49QMH4", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/RU49QMH4", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Ammon et al.", "numChildren": 0 }, "data": { "key": "RU49QMH4", "version": 1, "itemType": "patent", "title": "Method and device for the production of a silicon single crystal, silicon ...", "creators": [ { "creatorType": "inventor", "firstName": "Wilfried Von", "lastName": "Ammon" }, { "creatorType": "inventor", "firstName": "Janis", "lastName": "Virbulis" }, { "creatorType": "inventor", "firstName": "Martin", "lastName": "Weber" }, { "creatorType": "inventor", "firstName": "Thomas", "lastName": "Wetzel" }, { "creatorType": "inventor", "firstName": "Herbert", "lastName": "Schmidt" } ], "abstractNote": "A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm3 to 7.2*1017 cm3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.", "place": "", "country": "", "assignee": "Siltronic AG", "issuingAuthority": "", "patentNumber": "", "filingDate": "", "pages": "", "applicationNumber": "10/809,070", "priorityNumbers": "", "issueDate": "", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.it/patents?hl=en&lr=&vid=USPATAPP10809070&id=4aGfAAAAEBAJ&oi=fnd&dq=induction+radiative+element+graphite+resistors+conduction+comparison", "accessDate": "2009-05-21T09:35:04Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 438502000; 438478000 ; International Classification: H01L021/30; H01L021/46; C30B001/00; H01L021/20; H01L021/36", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "X6J82GDR", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/X6J82GDR", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/X6J82GDR", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Choudhury et al.", "parsedDate": "2000-02-22", "numChildren": 0 }, "data": { "key": "X6J82GDR", "version": 1, "itemType": "patent", "title": "Method and apparatus for the oriented solidification of molten silicon to ...", "creators": [ { "creatorType": "inventor", "firstName": "Alok", "lastName": "Choudhury" }, { "creatorType": "inventor", "firstName": "Matthias", "lastName": "Blum" }, { "creatorType": "inventor", "firstName": "Harald", "lastName": "Scholz" }, { "creatorType": "inventor", "firstName": "Georg", "lastName": "Jarczyk" } ], "abstractNote": "For the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber (9, 41) with a cooling body (11), which can be lowered relative to the chamber, the flat bottom surface of a seed body (25) of solid silicon is laid on the surface of the cooling body. The top surface of the seed body (25) is melted, and the ingot is grown on top of it as the cooling body is lowered by relative motion with respect to the crystallization chamber (9, 41) at a rate which is dependent on the supply of additional silicon and the solidification rate. For the purpose of producing large ingots with a coarsely crystalline to monocrystalline structure, a seed body (25) with a crystalline structure selected from the group ranging from coarsely crystalline to monocrystalline is used. Either lump silicon is placed on top of the seed body (25) and melted by induction, or molten silicon is produced in a forehearth (37) and poured onto the seed body (25). The seed body...", "place": "", "country": "", "assignee": "Ald Vacuum Technologies GmbH", "issuingAuthority": "", "patentNumber": "6027563", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Feb 22, 2000", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=OZAEAAAAEBAJ&dq=ciszek+4572812", "accessDate": "2008-12-11T11:55:21Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 117/18; 117/33; 117/214; 117/216; 117/924 ; International Classification: C30B 1520", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "2W7RKGP4", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/2W7RKGP4", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/2W7RKGP4", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Lian and Ching", "parsedDate": "2004-09-28", "numChildren": 0 }, "data": { "key": "2W7RKGP4", "version": 1, "itemType": "patent", "title": "Method and apparatus for solidification-controllable induction melting of ...", "creators": [ { "creatorType": "inventor", "firstName": "Shuang-Shii", "lastName": "Lian" }, { "creatorType": "inventor", "firstName": "Chu Hsia", "lastName": "Ching" } ], "abstractNote": "A method for solidification-controllable induction melting of alloy with cold copper crucible employs the vacuum induction furnace with cold crucible to melt metals, particularly active metals, to obtain alloy ingots having directionally solidified structure at the same time. By using the cold crucible also as a solidification mold in the melting of metal materials, controlling working parameters of the induction furnace, and changing the copper crucible design, it is possible to control the solidified structure of the melted alloy and obtain high quality ingots having impurity-free and directionally arranged or fine-crystalline structure. The problem of low metal melting efficiency in the conventional vacuum induction furnace with cold crucible due to loss of a large amount of heat carried away by cooling water for cooling the crucible can therefore be overcome.", "place": "", "country": "", "assignee": "National Taiwan University", "issuingAuthority": "", "patentNumber": "6798821", "filingDate": "", "pages": "", "applicationNumber": ": 10/408,225", "priorityNumbers": "", "issueDate": "Sep 28, 2004", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=YF4SAAAAEBAJ&dq=%22directional+solidification%22+cost+silicon+resistance+-refining", "accessDate": "2009-01-22T15:58:07Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 373/140; 373/156 ; International Classification: F27D 706; H05B 622", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "2BDIJNCM", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/2BDIJNCM", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/2BDIJNCM", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Ciszek", "parsedDate": "1980-12-16", "numChildren": 0 }, "data": { "key": "2BDIJNCM", "version": 1, "itemType": "patent", "title": "Method and apparatus for forming silicon crystalline bodies", "creators": [ { "creatorType": "inventor", "firstName": "Theodore F.", "lastName": "Ciszek" } ], "abstractNote": "Apparatus for forming an elongated silicon crystalline body using a specially designed capillary die. The apparatus uses a higher melt meniscus in the central region of the growth front than at the edges of the front. The edges of the top surface of the die are not concentric with the ribbon cross-section.", "place": "", "country": "", "assignee": "International Business Machines Corporation", "issuingAuthority": "", "patentNumber": "4239734", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Dec 16, 1980", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=PbkTAAAAEBAJ", "accessDate": "2009-01-28T08:54:08Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 422/246; 156DIG73 ; International Classification: C30B 1534", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "TS368TFA", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/TS368TFA", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/TS368TFA", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Gigliotti et al.", "parsedDate": "2001-08-21", "numChildren": 0 }, "data": { "key": "TS368TFA", "version": 1, "itemType": "patent", "title": "Liquid metal cooled directional solidification process", "creators": [ { "creatorType": "inventor", "firstName": "Michael Francis Xavier", "lastName": "Gigliotti" }, { "creatorType": "inventor", "firstName": "", "lastName": "Jr" }, { "creatorType": "inventor", "firstName": "Shyh-Chin", "lastName": "Huang" }, { "creatorType": "inventor", "firstName": "Roger John", "lastName": "Petterson" }, { "creatorType": "inventor", "firstName": "Ji-cheng", "lastName": "Zhao" } ], "abstractNote": "A liquid metal cooled directional solidification process provides improved solidification characteristics at the solidification front. In the process, a mold is filled with molten metal; and a solidification interface is caused to pass through the molten metal by progressively immersing the mold into a cooling liquid. The cooling liquid is a eutectic or near eutectic metal composition. A directional solidification furnace includes a heating furnace, a liquid cooling bath and a mold positioner. The heating furnace has an open bottom end through which a heated mold containing molten metal is lowered from the furnace. The liquid cooling bath comprises a molten eutectic or near eutectic metal composition positioned beneath the open end of the furnace. The mold positioner gradually lowers the heated mold from the furnace, through the open end and immerses the mold into the liquid cooling bath.", "place": "", "country": "", "assignee": "General Electric Company", "issuingAuthority": "", "patentNumber": "6276433", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "Aug 21, 2001", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.com/patents?id=BjEHAAAAEBAJ&dq=silicon+furnace+solidification+-induction", "accessDate": "2009-01-08T09:33:14Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 164/122.1; 164/126; 164/128 ; International Classification: B22D 2704; B22D 2700; B22D 1710", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } }, { "key": "J8MMRUEI", "version": 1, "library": { "type": "group", "id": 1036, "name": "sgSi", "links": { "alternate": { "href": "https://www.zotero.org/groups/sgsi", "type": "text/html" } } }, "links": { "self": { "href": "https://api.zotero.org/groups/1036/items/J8MMRUEI", "type": "application/json" }, "alternate": { "href": "https://www.zotero.org/groups/sgsi/items/J8MMRUEI", "type": "text/html" } }, "meta": { "createdByUser": { "id": 25358, "username": "dario", "name": "Dario Ciscato", "links": { "alternate": { "href": "https://www.zotero.org/dario", "type": "text/html" } } }, "creatorSummary": "Kolotilo et al.", "parsedDate": "1980-05-06", "numChildren": 0 }, "data": { "key": "J8MMRUEI", "version": 1, "itemType": "patent", "title": "Induction melting furnace", "creators": [ { "creatorType": "inventor", "firstName": "Daniil M.", "lastName": "Kolotilo" }, { "creatorType": "inventor", "firstName": "Viktor V.", "lastName": "Fursov" }, { "creatorType": "inventor", "firstName": "Anatoly A.", "lastName": "Cherevaty" }, { "creatorType": "inventor", "firstName": "Nikolai D.", "lastName": "Mazovsky" }, { "creatorType": "inventor", "firstName": "Leonid M.", "lastName": "Goncharov" }, { "creatorType": "inventor", "firstName": "Larisa D.", "lastName": "Apatova" } ], "abstractNote": "An induction furnace intended for melting a metal which is disposed in a crucible in an alternating magnetic field developed by an inductor enveloping this crucible. Induced in the metal is a current which heats the latter. Fixedly mounted intermediate the crucible and the inductor on the outer surface of the latter is a heat-resistant current-conducting screen made from a carbon material of not more than 1.5 mm thick. The screen envelops the entire inner surface of the inductor and is electrically connected to a signal system intended to indicate the degree of wear of the crucible wall. The signal system is set to a predetermined voltage at which the furnace is shut down to avoid an emergency situation.", "place": "", "country": "", "assignee": "", "issuingAuthority": "", "patentNumber": "4201882", "filingDate": "", "pages": "", "applicationNumber": "", "priorityNumbers": "", "issueDate": "6 May 1980", "priorityDate": "", "references": "", "legalStatus": "", "DOI": "", "citationKey": "", "url": "http://www.google.it/patents?id=JqI8AAAAEBAJ", "accessDate": "2009-05-21T13:27:42Z", "shortTitle": "", "language": "", "rights": "", "extra": "U.S. Classification: 13/27; 13/35 ; International Classification: H05B 500", "tags": [], "collections": [], "relations": {}, "dateAdded": "2009-05-26T09:01:04Z", "dateModified": "2009-05-26T09:01:04Z" } } ]